silicon pin photodiode, rohs compliant www.vishay.com for technical questions, contact: detectortechsupport@vishay.com document number: 81524 394 rev. 1.5, 08-sep-08 BPW46 vishay semiconductors description BPW46 is a pin photodiode with high speed and high radiant sensitivity in a clear, side view plastic package. it is sensitive to visible and near infrared radiation. features ? package type: leaded ? package form: side view ? dimensions (l x w x h in mm): 5 x 3 x 6.4 ? radiant sensitive area (in mm 2 ): 7.5 ? high photo sensitivity ? high radiant sensitivity ? suitable for visible and near infrared radiation ? fast response times ? angle of half sensitivity: ? = 65 ? lead (pb)-free component in accordance with rohs 2002/95/ec and weee 2002/96/ec applications ? high speed photo detector note test condition see table ?basic characteristics? note moq: minimum order quantity note t amb = 25 c, unless otherwise specified 94 8 632 product summary component i ra (ma) ? (deg) 0.1 (nm) BPW46 50 65 430 to 1100 ordering information ordering code packaging remarks package form BPW46 bulk moq: 4000 pcs, 4000 pcs/bulk side view absolute maximum ratings parameter test condition symbol value unit reverse voltage v r 60 v power dissipation t amb 25 c p v 215 mw junction temperature t j 100 c operating temperature range t amb - 40 to + 100 c storage temperature range t stg - 40 to + 100 c soldering temperature t 5 s t sd 260 c thermal resistance junction/ambient connected with cu wire, 0.14 mm 2 r thja 350 k/w
document number: 81524 for technical questi ons, contact: detectortechsupport@vishay.com www.vishay.com rev. 1.5, 08-sep-08 395 BPW46 silicon pin photodiode, rohs compliant vishay semiconductors note t amb = 25 c, unless otherwise specified basic characteristics t amb = 25 c, unless otherwise specified fig. 1 - reverse dark current vs. ambient temperature fig. 2 - relative reverse light current vs. ambient temperature basic characteristics parameter test condition symbol min. typ. max. unit breakdown voltage i r = 100 a, e = 0 v (br) 60 v reverse dark current v r = 10 v, e = 0 i ro 230na diode capacitance v r = 0 v, f = 1 mhz, e = 0 c d 70 pf v r = 3 v, f = 1 mhz, e = 0 c d 25 40 pf open circuit voltage e e = 1 mw/cm 2 , = 950 nm v o 350 mv temperature coefficient of v o e e = 1 mw/cm 2 , = 950 nm tk vo - 2.6 mv/k short circuit current e a = 1 klx i k 70 a e e = 1 mw/cm 2 , = 950 nm i k 47 a temperature coefficient of v k e e = 1 mw/cm 2 , = 950 nm tk vk 0.1 %/k reverse light current e a = 1 klx, v r = 5 v i ra 75 a e e = 1 mw/cm 2 , = 950 nm, v r = 5 v i ra 40 50 a angle of half sensitivity ? 65 deg wavelength of peak sensitivity p 900 nm range of spectral bandwidth 0.1 430 to 1100 nm noise equivalent power v r = 10 v, = 950 nm nep 4 x 10 -14 w/ hz rise time v r = 10 v, r l = 1 k , = 820 nm t r 100 ns fall time v r = 10 v, r l = 1 k , = 820 nm t f 100 ns 20 40 60 8 0 1 10 100 1000 100 94 8 403 v r = 10 v t am b - am b ient temperat u re (c) i ro - re v erse dark c u rrent (na) 0.6 0. 8 1.0 1.2 1.4 i ra, rel - relati v e re v erse light c u rrent t am b - am b ient temperat u re (c) 94 8 416 v r = 5 v = 950 nm 0 100 8 0 60 40 20
www.vishay.com for technical questions, contact: detectortechsupport@vishay.com document number: 81524 396 rev. 1.5, 08-sep-08 BPW46 vishay semiconductors silicon pin photodiode, rohs compliant fig. 3 - reverse light current vs. irradiance fig. 4 - reverse light current vs. illuminance fig. 5 - reverse light current vs. reverse voltage fig. 6 - diode capacitance vs. reverse voltage fig. 7 - relative spectral sensitivity vs. wavelength fig. 8 - relative radiant sensitivity vs. angular displacement 0.01 0.1 1 0.1 1 10 100 1000 10 94 8 417 v r = 5 v = 950 nm e e - irradiance (m w /cm 2 ) i ra - re v erse light c u rrent ( a) 0.1 1 10 100 1000 94 8 41 8 10 1 10 2 10 3 10 4 v r =5 v e a - ill u minance (lx) i - re v erse light c u rrent ( a) ra 0.1 1 10 1 10 100 100 94 8 419 1 m w /cm 2 0.5 m w /cm 2 0.2 m w /cm 2 0.1 m w /cm 2 0.05 m w /cm 2 = 950 nm v r - re v erse v oltage ( v ) i ra - re v erse light c u rrent ( a) 0 20 40 60 8 0 94 8 407 e = 0 f = 1 mhz c d - diode capacitance (pf) v r - re v erse v oltage ( v ) 0.1 100 110 350 550 750 950 0 0.2 0.4 0.6 0. 8 1.0 1150 94 8 420 - w a v elength (nm) s ( ) rel - relati v e spectral sensiti v ity 0.4 0.2 0 s rel - relati v e radiant sensiti v ity 94 8 406 0.6 0.9 0. 8 0 30 10 20 40 50 60 70 8 0 0.7 1.0 ? - ang u lar displacement
document number: 81524 for technical questi ons, contact: detectortechsupport@vishay.com www.vishay.com rev. 1.5, 08-sep-08 397 BPW46 silicon pin photodiode, rohs compliant vishay semiconductors package dimensions in millimeters 7.2 9.3 < 0.7 0.95 0.4 (0.7) 0.45 5 1.5 sensiti v e area 0.2 0.2 0.2 - 0.2 - 0.2 0.3 0.05 0.05 iss u e:1; 01.07.96 dra w ing- n o.: 6.544-5109.01-4 specifications according to di n technical dra w ings area not plane c a - 0. 8 20.2 3 2.54 nom. 6.4 (3.2) < 0.65 96 12196
document number: 91000 www.vishay.com revision: 18-jul-08 1 disclaimer legal disclaimer notice vishay all product specifications and data are subject to change without notice. vishay intertechnology, inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, ?vishay?), disclaim any and all liability fo r any errors, inaccuracies or incompleteness contained herein or in any other disclosure relating to any product. vishay disclaims any and all li ability arising out of the use or application of any product describ ed herein or of any information provided herein to the maximum extent permit ted by law. the product specifications do not expand or otherwise modify vishay?s terms and conditions of purcha se, including but not limited to the warranty expressed therein, which apply to these products. no license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of vishay. the products shown herein are not designed for use in medi cal, life-saving, or life-sustaining applications unless otherwise expressly indicated. customers using or selling vishay products not expressly indicated for use in such applications do so entirely at their own risk and agree to fully indemnify vishay for any damages arising or resulting from such use or sale. please contact authorized vishay personnel to obtain written terms and conditions regarding products designed for such applications. product names and markings noted herein may be trademarks of their respective owners.
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